Semiconductor Cross-Section
n⁺ - p - n⁺ Enhancement MOSFET (L = 1.0 μm)
Surface Energy Band Diagram (Source → Channel → Drain)
EC, EFS, Ei, EV • qVDS Energy Separation
Saturation / Pinch-Off
V_DS ≥ V_DS(sat)
ID Formula:
I_D = ½ μ_n C_ox (W/L) (V_GS - V_T)² (1 + λV_DS)
Pinch-Off:
V_DS(sat) = V_GS - V_T = 2.00 V - 0.70 V = 1.30 V
Modulation:
ΔL = 0.082 μm • r_o ≈ 1/(λ I_D) = 45.2 kΩ
Drain Current ID
1.42 mA
Pinch-Off VDS(sat)
1.30 V
Transconductance gm
1.85 mS
Output Resist. ro
45.2 kΩ
VGS Family
Pinch-off (VDS(sat))
Operating Point (Q)